DMG4N65CT document number: ds35719 rev. 4 - 2 1 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio n-channel enhancement mode mosfet product summary description this new generation complementary mosfet features low on- resistance and fast switching, making it ideal for high efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions v (br)dss r ds(on) package i d t c = 25c 650v 3.0 @v gs = 10v to220-3 4.0 a features ? low input capacitance ? high bvdss rating for power application ? low input/output leakage ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to220-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish-matte ti n annealed over copper leadframe solderable per mil-std-202, method 208 ? terminal connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMG4N65CT to220-3 50 pieces/tube notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com. marking information equivalent circuit d s g 4n65ct = product type marking code yyww = date code marking yy = last two digits of year (ex: 12 = 2012) ww = week (01 - 53) top view pin out configuration to220-3 top view 4n65ct yyww
DMG4N65CT document number: ds35719 rev. 4 - 2 2 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current (note 5) v gs = 10v steady state t c = +25c t c = +70c i d 4.0 3.0 a pulsed drain current (note 7) i dm 6 a avalanche current (note 8) v dd = 100v, v gs = 10v, l = 60mh i as 3.9 a repetitive avalanche energy (note 7) e as 456 mj thermal characteristics characteristic symbol max unit power dissipation (note 5) p d 2.19 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 58.5 c/w power dissipation (note 6) p d 9.14 w thermal resistance, junction to ambient @t a = +25c (note 6) r ja 2.85 c/w thermal resistance, junction to case @t a = +25c (note 6) r jc 0.86 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9) drain-source breakdown voltage bv dss 650 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 1.0 a v ds = 650v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 30v, v ds = 0v on characteristics (note 9) gate threshold voltage v gs ( th ) 3 - 5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds ( on ) - 2.1 3.0 v gs = 10v, i d = 2a forward transfer admittance |y fs | - 3.7 - s v ds = 40v, i d = 2a diode forward voltage v sd - 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 10) input capacitance c iss - 900 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 50 - reverse transfer capacitance c rss - 1.1 - gate resistance r g - 2.4 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge v gs = 10v q g - 13.5 - nc v gs = 10v, v ds = 520v, i d = 4a gate-source charge q g s - 2.7 - gate-drain charge q g d - 3.8 - turn-on delay time t d ( on ) - 15.1 - ns v gs = 10v, v ds = 325v, r g = 25 ? , i d = 4a turn-on rise time t r - 13.8 - ns turn-off delay time t d ( off ) - 40 - ns turn-off fall time t f - 16 - ns body diode reverse recovery time t r r - 515 - ns di/dt = 100a/ s, v ds = 100v, i f = 4a body diode reverse recovery charge q r r - 2330 - nc notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. 6. device mounted on an infinite heatsink 7. repetitive rating, pulse width limited by junction temperature. 8. i as and e as rating are based on low frequency and duty cycles to keep t j = +25c. 9. short duration pulse test used to minimize self-heating effect. 10. guaranteed by design. not subject to production testing.
DMG4N65CT document number: ds35719 rev. 4 - 2 3 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 04 8121620 v , drain-source voltage (v) fig.1 typical output characteristic ds i, d r ain c u r r en t (a) d 0.001 0.01 0.1 1 10 23456 i, d r ain c u r r en t (a) d v , gate-source voltage (v) gs fig. 2 typical transfer characteristics v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 1 2 3 4 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = 10v gs v = 20v gs 01 234 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v=v i= 4a gs d 15 v=v i= 2a gs d 10 0 0.5 1.0 1.5 2.0 2.5 3.0 -50-25 0 255075100125150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v=v i= 4a gs d 15 v=v i= 2a gs d 10 v=v i= 4a gs d 15 v=v i= 2a gs d 10
DMG4N65CT document number: ds35719 rev. 4 - 2 4 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i= 1ma d i = 250a d 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig.8 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t= 25c a 0 100 200 300 400 500 600 1 10 100 1,000 i, d r ain leaka g e c u r r en t (na) dss 10,000 v , drain-source voltage (v) ds fig. 9 typical drain-source leakage current vs. voltage t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0.001 0.01 0.1 1 10 100 1,000 10,000 t1, pulse duration time (sec) fig. 10 transient thermal resistance r = r * r ja(t) (t) ja ja r = 106 c/w duty cycle, d = t1/t2 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse
DMG4N65CT document number: ds35719 rev. 4 - 2 5 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. to220-3 dim min max a 3.55 4.85 b 0.51 1.14 b1 1.14 1.78 c 0.31 1.14 d 14.20 16.50 d1 5.84 6.86 e 9.70 10.70 e 2.79 2.99 e1 4.83 5.33 f 0.51 1.40 j1 2.03 2.92 l 12.72 14.72 l1 3.66 6.35 p 3.53 4.09 q 2.54 3.43 all dimensions in mm a f c d e l b e1 b1 d1 q l1 j1 e seating plane ?p
DMG4N65CT document number: ds35719 rev. 4 - 2 6 of 6 www.diodes.com november 2012 ? diodes incorporated DMG4N65CT advance informatio important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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